ロングテック株式会社
product
Semiconductor
High-Purity Cerium Oxide Abrasive
Technical Capabilities
Particle Size Control
Advanced particle size control technology enables a narrow particle size distribution and excellent dispersion stability.
Particle Shape Control
High-precision control of various particle shapes, including spherical, triangular, hexagonal, and cubic particles.
Diverse Manufacturing Processes
We support various manufacturing processes, including calcination and sol-gel methods, and are also developing composite particles.
Integrated Production System
We have established an integrated production system covering synthesis, calcination, dispersion, and ultra-precision classification.
Products for STI / ILD Planarization Processes at 14 nm and Above
Products for STI / ILD Planarization Processes at 14 nm and Below
Semiconductor Wafer Slurry
CMP Slurries for Coarse and Fine Polishing of SiC Substrates and Si Wafers
Benchmark Evaluation
Evaluation Conditions:
・Equipment: 16B DSP Double-Sided Polishing Machine
・Polishing Pad: DuPont SUBA800
・Substrate: 14 × 6-inch SiC wafers
・Polishing Time: 3 hours
・Platen Rotation Speed: 35 rpm
Process Performance by Product:
CONTACT US
Tel.06-6123-1110
Business Hours: 10:00-18:00
Closed: Saturday & Sunday