ロングテック株式会社
product
SiC Wafer
High Quailty P Grade 100mm 4/6/8inch
New Supply 4/6/8 inchSiC Wafer Device Application-Specific Required Specifications
| Item | 650V | 1200V | 1700V |
|---|---|---|---|
| Main application | MOSFET / SBD / JBS | MOSFET / SBD / JBS | MOSFET / PiN |
| Substrate type | 4H-SiC n-type | 4H-SiC n-type | 4H-SiC n-type |
| Resistivity (Ω·cm) | 0.01–0.03 | 0.02–0.05 | 0.05–0.10 |
| Micropipe | 0 | 0 | 0 |
| BPD density (cm⁻²) | 0.5 | 0.2 | 0.1 |
| TSD/TED | Below control limit | Below control limit | Extremely low |
| Wafer diameter | 150 / 200 mm | 150 / 200 mm | 150 / 200 mm |
| Off-angle | 4° ± 0.1° | 4° ± 0.1° | 4° ± 0.1° |
| Surface roughness RMS | 0.2 nm | 0.15 nm | 0.1 nm |
| TTV | 5 µm | 4 µm | 3 µm |
| Bow / Warp | 30 µm | 30 µm | 25 µm |
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